SiGe HBT Device Expert

We can't predict what the future holds, but we know Texas Instruments will have a part in shaping it. The Advanced Technology Development team at TI is looking for a Process Development Engineer with a long-term goal to be responsible for the development, characterization and optimization of BiCMOS SiGeC devices to meet the requirements for volume production. The ideal candidate will have a solid foundation in the theory of semiconductor CMOS or BJT process and device physics and would be comfortable driving the characterization and optimization of the device and process to insure robustness, reliability, and manufacturability meeting all electrical device performance targets. Responsibilities include: Develop new processes and components to enable next generation BICMOS SiGeC technologies. Drive the TCAD simulation (process and device simulation, HF simulations), design of experiments, RF and DC characterization, and data analysis of key components. Work with multiple process, integration, reliability, packaging, circuit design and test engineers to achieve these goals. Work closely with the product groups to identify and optimize the BICMOS component performance to meet critical final device parameters to enable game changing products in the market. Work across different development groups; process flow, device design, modelling, simulation, reliability, etc. The person performing this role must be capable to plan effectively, drive schedules, meet critical deadlines on multiple tasks in parallel, lead technical discussions in their area of expertise, and work effectively across organizational boundaries. They must be able to clearly communicate project status and actions. Additionally, they must be able to interface with multiple organizations and work well on a diverse team to accomplish goals. Minimum requirements: Masters degree in Electrical Engineering or Physics 10+ years of professional experience as a Device/PI engineer working with SiGe HBT devices. Strong device physics and semiconductor device engineering background Industry experience in developing SiGe:C HBT transistors for RF/mm-wave applications Preferred qualifications: Ph.D. in EE/Physics Proven track record of defining, developing and delivering SiGe:C HBT components in a production flow Industry experience/knowledge on silicon device manufacturing from design through fabrication to test Industry project experience/knowledge of BICMOS device technology Hands-on SiGe HBT TCAD simulation experience (process and device) or high frequency simulation in 3D field solvers Ability to take the initiative and drive for results Experience with Cadence layout and circuit simulation Strong software skills and knowledge of software tools such as MATLAB, JMP, statistical software, etc. Ability to establish strong relationships with key stakeholders critical to success, both internally and externally Strong verbal and written communication skills Ability to work in teams and collaborate effectively with people in different functions and locations